GT50G321 2002-12-11 1 toshiba insulated gate bipolar transistor silicon n channel igbt GT50G321 the 4th generation current resonance inverter switching applications frd included between emitter and collector enhancement-mode high speed: t f = 0.30 s (typ.) (i c = 60 a) low saturation voltage: v ce (sat) = 1.8 v (typ.) (i c = 60 a) maximum ratings (ta = 25c) characteristics symbol rating unit collector-emitter voltage v ces 400 v gate-emitter voltage v ges 25 v dc i c 50 collector current 1 ms i cp 100 a dc i f 15 emitter-collector foward current 1 ms i fp 30 a collector power dissipation (tc = 25c) p c 130 w junction temperature t j 150 c storage temperature range t stg ? 55 to 150 c equivalent circuit unit: mm jedec D jeita D toshiba 2-21f2c weight: 9.75 g (typ.) gate emitter collector
GT50G321 2002-12-11 2 electrical characteristics (ta = 25c) characteristics symbol test condition min typ. max unit gate leakage current i ges v ge = 25 v, v ce = 0 D D 500 na collector cut-off current i ces v ce = 400 v, v ge = 0 D D 1.0 ma gate-emitter cut-off voltage v ge (off) i c = 60 ma, v ce = 5 v 3.0 D 6.0 v collector-emitter saturation voltage v ce (sat) i c = 60 a, v ge = 15 v D 1.8 2.5 v input capacitance c ies v ce = 10 v, v ge = 0, f = 1 mhz D 3900 D pf rise time t r D 0.33 D turn-on time t on D 0.43 D fall time t f D 0.30 0.40 switching time turn-off time t off D 0.54 D s forward voltage v f i f = 15 a, v ge = 0 D D 2.0 v reverse recovery time t rr i f = 15 a, v ge = 0 di/dt = ? 100 a/s D D 0.2 s thermal resistance (igbt) r th (j-c) D D D 0.96 c/w thermal resistance (frd) r th (j-c) D D D 2.08 c/w ? 15 v 15 v 0 200 v 3.33 ? 39 ?
GT50G321 2002-12-11 3 gate-emitter voltage v ge (v) collector-emitter voltage v ce (v) gate-emitter voltage v ge (v) collector-emitter voltage v ce (v) collector-emitter voltage v ce (v) collector current i c (a) gate-emitter voltage v ge (v) collector-emitter voltage v ce (v) gate-emitter voltage v ge (v) collector current i c (a) case temperature tc (c) collector-emitter saturation voltage v ce (sat) (v) i c ? v ce v ce ? v ge v ce ? v ge v ce ? v ge i c ? v ge v ce (sat) ? tc 6 0 2 4 8 10 common emitter tc = ? 40c 0 4 8 12 20 24 16 30 i c = 10 a 80 60 10 8 6 4 2 0 common emitter tc = 25c 30 i c = 10 a 80 0 4 8 12 20 24 16 60 0 common emitter tc = 125c 0 4 8 12 20 24 16 10 8 6 4 2 30 i c = 10 a 80 60 tc = 125c 25 common emitter v ce = 5 v ? 40 0 2 4 6 8 10 0 20 40 60 80 100 common emitter v ge = 15 v i c = 10 a 60 80 30 ? 40 0 40 80 120 160 0 1 2 3 4 v ge = 7 v common emitter tc = 25c 0 1 2 3 4 5 9 0 20 15 10 20 40 60 80 100 8
GT50G321 2002-12-11 4 gate resistance r g ( ? ) switching time (s) collector-emitter voltage v ce (v) safe operating area collector current i c (a) collector current i c (a) switching time (s) gate charge q g (nc) collector-emitter voltage v ce (25 v) gate-emitter voltage v ge (v) collector-emitter voltage v ce (v) capacitance c (pf) c ? v ce v ce , v ge ? q g switching time ? i c switching time ? r g 5 3 5 10 30 100 300 0.1 0.3 1 t of f t on t f t r common emitter v cc = 200 v v gg = 15 v i c = 60 a tc = 25c 0.5 50 3 common emitter r l = 3.3 ? tc = 25c 0 0 40 80 120 160 200 4 8 12 16 20 v ce = 200 v 100 150 1 0.01 0 0.3 0.5 0.1 10 50 70 60 t of f t on t f t r common emitter v cc = 200 v v gg = 15 v r g = 39 ? tc = 25c 20 30 40 0.03 0.05 3 10 1 3000 1000 10 300 5000 10000 30 100 3000 common emitter v ge = 0 f = 1 mhz tc = 2 5 c c ies c oes c res 500 300 1000 100 30 50 *: single nonrepetitive pulse tc = 25c curves must be derated linearly with increase in temperature. i c max (pulsed) i c max (continuous) dc operation 1 ms* 100 s* 10 s* 1 0.3 0.5 1 3 5 10 30 300 3 10 30 100 300 1000 10 ms* 50 100
GT50G321 2002-12-11 5 pulse width t w (s) transient thermal resistance r th (t) (c/w) di/dt (a/s) reverse recovery time t rr (ns) reverse voltage v r (v) junction capacitance c j (pf) collector-emitter voltage v ce (v) collector current i c (a) c j ? v r forward voltage v f (v) i f ? v f forward current i f (a) peak reverse recovery current i rr (a) i rr , t rr ? di/dt reverse recovery time t rr (ns) i rr , t rr ? i f forward current i f (a) r th (t) ? t w reverse bias soa 1 1 3 5 10 30 50 100 300 3 10 30 100 300 1000 t j 125c v ge = 15 v r g = 39 ? common collector di/dt = ? 100 a/s v ge = 0 tc = 25c 1 3 5 10 30 50 0 4 8 12 16 20 i rr t rr 10 30 50 100 300 500 3 1 5 10 30 50 100 300 500 3 5 10 30 50 100 300 500 f = 1 mhz tc = 25c tc = 125c 25 common collector v ge = 0 ? 40 0 0.4 0.8 1.2 1.6 2.0 0 10 20 30 40 50 0 10 8 6 4 2 0 40 120 160 200 common collector i f = 15 a tc = 25c i rr t rr 80 peak reverse recovery current i rr (a) 200 0 100 10 ? 3 10 2 10 ? 5 10 ? 4 10 ? 3 10 ? 2 10 ? 1 10 0 10 1 10 2 10 ? 2 10 ? 1 10 0 10 1 tc = 25c diode sta g e igbt sta g e
GT50G321 2002-12-11 6 toshiba is continually working to improve the quality and reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. it is the responsibility of the buyer, when utilizing toshiba products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshiba products specifications. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semiconductor devices,? or ?toshiba semiconductor reliability handbook? etc.. the toshiba products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. unintended usage of toshiba products listed in this document shall be made at the customer?s own risk. the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba corporation for any infringements of intellectual property or other rights of the third parties which may result from its use. no license is granted by implication or otherwise under any intellectual property or other rights of toshiba corporation or others. the information contained herein is subject to change without notice. 000707ea a restrictions on product use
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